Molecular random access memory cell
نویسندگان
چکیده
Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory is demonstrated. Bit retention times .15 min have been observed. © 2001 American Institute of Physics. @DOI: 10.1063/1.1377042#
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